advanced power p-channel enhancement mode electronics corp. power mosfet low gate charge bv dss -30v fast switching characteristic r ds(on) 50m simple drive requirement i d 3 - 6a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 45 /w halogen-free product -4.8 pulsed drain current 1 -24 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 parameter total power dissipation thermal data drain current, v gs @ 10v 3 storage temperature range 2.78 -55 to 150 operating junction temperature range -55 to 150 AP3P050K rating - 30 + 20 - 6 201707211 1 a p3p050 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. g d s d d s g sot-223 .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5.3a - - 50 m v gs =-4.5v, i d =-4.2a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance 2 v ds =-10v, i d =-4a - 10 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-4a - 6.7 10.7 nc q gs gate-source charge v ds =-15v - 2.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 1.9 - nc t d(on) turn-on delay time v ds =-15v - 4 - ns t r rise time i d =-1a - 19 - ns t d(off) turn-off delay time r g =3.3 -21- ns t f fall time v gs =-10v - 18 - ns c iss input capacitance v gs =0v - 850 1360 pf c oss output capacitance v ds =-15v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.3a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-4a, v gs =0v, - 19 - ns q rr reverse recovery charge di/dt=-100a/s - 2.3 - nc notes: 1.pulse width limited by max junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. 2 AP3P050K .
ap3p050 k fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v gs =-4.0v 0 4 8 12 16 0246 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = - 250ua 0.1 1 10 0 0.4 0.8 1.2 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 30 40 50 60 70 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -4.2a t a =25 o c 0.6 1.0 1.4 1.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5.3 a v g =-10v .
ap3p050 k fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics 4 fig 12. drain current v.s. ambient temperature 0 400 800 1200 1600 1 5 9 13 17 21 25 29 33 37 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + ta r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 2 4 6 8 10 0481216 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -4a v ds = -15v operation in this area limited by r ds(on) 0 4 8 12 16 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -10v t j = -55 o c 0 2 4 6 8 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) .
ap3p050 k fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 1 2 3 4 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 100 200 300 400 0 4 8 12 16 20 24 -i d , drain current (a) r ds(on) (m ) t j =25 o c -4.5v v gs = -10v .
AP3P050K marking information 6 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 3p050 ywwsss .
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